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Electrical semiconductor characterization
Luminescence dating, research, dosimetry and more
Contamination monitor, beta-aerosol monitor, dose rate meter and more
for ultra-fast crystal orientation, crystal alignment in production, quality control, rocking curve measurements, material...
state-of-the-art XRD system for automatic single crystal ingot orientation, tilting and alignment for grinding
Wafer sorting, crystal orientation, resistivity, optical notch and flat determination
Flexible diffractometer for ultra-fast Omega Scan orientation determination
Smart diffractometer for ultra-fast Omega-scan of small samples.
Robust XRD equipment for fully automated in-line testing & alignment
for blanks, wafers & bars (AT, SC, TF, etc.)
three generations of X-ray engineers
in industrial production, R&D and more
discover the most convenient way of measuring orientation of single crystals
Mono- and Multi-crystalline wafer lifetime measurement device
Low cost table top lifetime measurement system for characterization of a variety of different silicon samples at different...
Mono- and Multi-crystalline wafer and brick lifetime measurement device
for production and quality control of monocrystalline Si ingots,bricks and wafers
Flexible OEM unit for lifetime measurements at a variety of different samples ranging from mono- to multicrystalline silicon...
for contactless and temperature dependent lifetime and LBIC measurements
High Resolution Resistivity Mapping Tool for process control and quality assurance measurements
The minority carrier life time is sensitive for all kinds of electrically active defects in semiconductors and is therefore...
MDP is an advanced technology with a so far unsurpassed combination of sensitivity, speed and resolution for fab and lab...
High sensitivity, high resolution surface photovoltage (SPV) measurement instrument
High sensitivity, high resolution surface photovoltage spectroscopy (SPS) instrument with a variable energy excitation source...
for quality control of bifacial PERC/PERC+ solar cells and more
portable in field PID tester for solar modules
user friendly and advanced operating software
The PIDcon devices are designed to investigate the PID susceptibility for production monitoring of solar cells as well as tests...
Learn more about the reasons for PID and the how the susceptibility of solar cells, mini modules and encapsulation materials can...
Our quality management system is an integrated process-oriented system with ISO 9001 certification.
The time-resolved or frequency-modulated, surface photovoltage spectroscopy (SPS) is based on a time-resolved/frequency modulated measurement of the spectral dependence of the surface photovoltage (SPV). It is a powerful non-destructive and contactless characterization method. It is mainly used to study the electronic transitions and optical properties of bulk materials, thin films and heterostructures. High sensitivity and the possibility of room temperature measurements are the key advantages of the SPV method. Another advantage is that there is no need for the preparation of a front contact on the investigated sample. In general, there is no need for preparing the sample for the measurement, allowing to investigate the sample under operation/process conditions in a wide temperature range under different atmospheric conditions. The information depth and thereby the possibility to extract bulk properties is limited by the lights penetration depth and the diffusion length. In comparison to other spectroscopic methods, such as but not limited to optical transmission, deep level transient spectroscopy, photoluminescence or Raman spectroscopy, the time-resolved/frequency modulated SPS or SPV (fixed wavelength) method is fast and uncomplicated and is thus an ideal tool for production floor decisions of sample quality. We distinguish between 3 different excitation modes, but common to all of them is that the relaxation aspect of states in the samples are resolved under ideal conditions.
A static SPV measurement is sensitive to any fast or slow process that lead to the separation of photogenerated carriers in space. The sample is illuminated until a saturation of the SPV signal is observed, after which the light is switched of. Measuring 1) the static SPV signal and 2) the time-resolved relaxation time gives a lot of useful information about the state of the material.
A SPV measurement that is performed under modulated illumination in a fixed capacitor arrangement is very sensitive to small changes in the SPV signal. And, only those SPV signals, which can follow the modulation frequency are contributing to the measured signal. The response of processes with relaxation times much longer than the modulation period are simply filtered out.
The most sensitive SPV measurement that can be made is a transient measurement, where illumination pulse of different pulse width are followed by a time dependent measurement of the decay of the SPV signal – in this way charge separation distances in the nanometre range can be investigated. This is particular important for surface or tunnelling dominated processes in the material.
µPCD/MDP (QSS)
PID
X-ray diffraction
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